Datasheet > 2SK2200_09

2SK2200_09

更新时间： 2024-01-23 09:12:12

品牌	Logo	应用领域
东芝 - TOSHIBA		驱动器转换器稳压器电机 DC-DC转换器
页数	文件大小	规格书
6页	420K
描述
Chopper Regulator, DC−DC Converter and Motor Drive

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中文翻译

获取价格

数据手册

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2SK2200_09 数据手册

2SK2200

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV)

2SK2200

Chopper Regulator, DC−DC Converter and Motor Drive

Applications

Unit: mm

z 4-V gate drive

z Low drain−source ON-resistance

z High forward transfer admittance

: R

= 0.28 Ω (typ.)

DS (ON)

: |Y | = 3.5 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 100 μA (max) (V

= 100 V)

DSS

: V = 0.8 to 2.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

100

±20

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Drain current

Pulse (Note 1)

JEDEC

JEITA

―

Drain power dissipation

1.3

Single pulse avalanche energy

(Note 2)

140

TOSHIBA

2-8M1B

Avalanche current

0.13

Weight: 0.54 g (typ.)

Repetitive avalanche energy (Note 3)

Channel temperature

°C

150

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

96.1

Unit

Thermal resistance, channel to ambient

°C / W

th (ch−a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V = 50 V, T = 25°C (initial), L = 25 mH, R = 25 Ω, I = 3 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2009-12-09

12 3 4 5 6

中文翻译

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与2SK2200_09相关器件

型号	品牌	获取价格	描述	数据表
2SK2200TP	TOSHIBA	获取价格	TRANSISTOR 3 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
2SK2201	TOSHIBA	获取价格	N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER
2SK2201(2-7B1B)	TOSHIBA	获取价格	TRANSISTOR 3 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-7B1B, SC-64, 3
2SK2201(2-7B2B)	TOSHIBA	获取价格	TRANSISTOR 3 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, SC-64, 3 PIN, FET General P
2SK2201_06	TOSHIBA	获取价格	N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER
2SK2201_10	TOSHIBA	获取价格	Chopper Regulator, DC/DC Converter and Motor Drive
2SK2201LBTE16L	TOSHIBA	获取价格	TRANSISTOR 3 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3, FET General Purpose
2SK2201LBTE16R	TOSHIBA	获取价格	TRANSISTOR 3 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3, FET General Purpose
2SK2201STA1	TOSHIBA	获取价格	TRANSISTOR 3 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, POWERMOLD, DPAK-3, FET Gene
2SK2201TE16L	TOSHIBA	获取价格	TRANSISTOR 3 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power

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