Datasheet > 2SK2204S

2SK2204S

更新时间： 2024-09-28 23:20:39

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数据手册

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2SK2204S 数据手册

2SK2204 L , 2SK2204 S

Silicon N Channel MOS FET

Application

LDPAK

High speed power switching

Features

• Low on–resistance

• High speed switching

• Low drive current

• 4 V gate drive device can be driven from

5 V cource

• Suitable for Switching regulator, DC – DC

converter

2, 4

1. Gate

2. Drain

3. Source

4. Drain

Table 1 Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

———————————————————————————————————————————

Drain to source voltage

DSS

———————————————————————————————————————————

Gate to source voltage

±20

GSS

———————————————————————————————————————————

Drain current

———————————————————————————————————————————

Drain peak current

I *

180

———————————————————————————————————————————

Body–drain diode reverse drain current

———————————————————————————————————————————

Channel dissipation

Pch**

———————————————————————————————————————————

Channel temperature

Tch

150

°C

———————————————————————————————————————————

Storage temperature

Tstg

–55 to +150

°C

———————————————————————————————————————————

PW ≤ 10 µs, duty cycle ≤ 1 %

** Value at Tc = 25 °C

12 3 4 5 6 7

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