Datasheet > 2SK2059(S)-(3)

2SK2059(S)-(3)

更新时间： 2024-11-16 14:46:23

品牌	Logo	应用领域
日立 - HITACHI		/
页数	文件大小	规格书
11页	54K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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2SK2059(S)-(3) 数据手册

2SK2059(L), 2SK2059(S)

Silicon N-Channel MOS FET

ADE-208-1341 (Z)

1st. Edition

Mar. 2001

Application

High speed power switching

Features

•

Low on-resistance

High speed switching

No Secondary Breakdown

Suitable for Switching regulator, DC - DC converter

Outline

DPAK-1

1. Gate

2. Drain

3. Source

4. Drain

12 3 4 5 6 7...11

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型号	品牌	获取价格	描述	数据表
2SK2059(S)TL	HITACHI	获取价格	Power Field-Effect Transistor, 3A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-o
2SK2059(S)TL	RENESAS	获取价格	3A, 600V, 5ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2059(S)TR	HITACHI	获取价格	Power Field-Effect Transistor, 3A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-o
2SK2059(S)TR	RENESAS	获取价格	3A, 600V, 5ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2059L	HITACHI	获取价格	Silicon N-Channel MOS FET
2SK2059L-E	RENESAS	获取价格	3A, 600V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
2SK2059S	HITACHI	获取价格	Silicon N-Channel MOS FET
2SK2059S	KEXIN	获取价格	Silicon N-Channel MOSFET
2SK2059S	TYSEMI	获取价格	Low on-resistance High speed switching No Secondary Breakdown
2SK2059STL-E	RENESAS	获取价格	3A, 600V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, SC-63, DPAK-3