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2SK2071-01L PDF预览

2SK2071-01L

更新时间: 2024-11-15 22:21:51
品牌 Logo 应用领域
富士电机 - FUJI 晶体晶体管功率场效应晶体管开关脉冲高压
页数 文件大小 规格书
2页 206K
描述
N-channel MOS-FET

2SK2071-01L 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
风险等级:5.84Is Samacsys:N
其他特性:HIGH VOLTAGE外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):2 A最大漏极电流 (ID):2 A
最大漏源导通电阻:6.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):20 W最大脉冲漏极电流 (IDM):6 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SK2071-01L 数据手册

 浏览型号2SK2071-01L的Datasheet PDF文件第2页 
N-channel MOS-FET  
2SK2071-01L,S  
FAP-IIA Series  
600V 6,5W  
2A  
20W  
> Features  
> Outline Drawing  
- High Speed Switching  
- Low On-Resistance  
- No Secondary Breakdown  
- Low Driving Power  
- High Voltage  
- VGS = ± 30V Guarantee  
- Avalanche Proof  
> Applications  
- Switching Regulators  
- UPS  
- DC-DC converters  
- General Purpose Power Amplifier  
> Maximum Ratings and Characteristics  
> Equivalent Circuit  
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified  
Item  
Symbol  
Rating  
Unit  
V
Drain-Source-Voltage  
V
600  
DS  
V
600  
V
Drain-Gate-Voltage (RGS=20KW)  
Continous Drain Current  
Pulsed Drain Current  
DGR  
I
2
A
D
I
6
±30  
A
D(puls)  
Gate-Source-Voltage  
V
V
GS  
Max. Power Dissipation  
Operating and Storage Temperature Range  
P
20  
W
°C  
°C  
D
T
150  
ch  
T
-55 ~ +150  
stg  
Electrical Characteristics (TC=25°C), unless otherwise specified  
-
Item  
Symbol  
Test conditions  
Min.  
600  
Typ.  
3,0  
Max.  
Unit  
V
ID=1mA  
VGS=0V  
Drain-Source Breakdown-Voltage  
Gate Threshhold Voltage  
Zero Gate Voltage Drain Current  
V
(BR)DSS  
ID=10mA  
VDS=600V  
VDS=VGS  
Tch=25°C  
Tch=125°C  
VDS=0V  
V
2,1  
4,0  
500  
1,0  
V
GS(th)  
I
10  
0,2  
10  
µA  
mA  
nA  
W
S
DSS  
V
GS=0V  
VGS=±30V  
ID=1A  
Gate Source Leakage Current  
Drain Source On-State Resistance  
Forward Transconductance  
Input Capacitance  
I
100  
6,5  
GSS  
VGS=10V  
VDS=25V  
R
5,5  
1,8  
270  
32  
DS(on)  
ID=1A  
g
1,0  
fs  
VDS=25V  
C
400  
48  
23  
6
pF  
pF  
pF  
ns  
ns  
ns  
ns  
A
iss  
VGS=0V  
f=1MHz  
VCC=300V  
ID=2A  
Output Capacitance  
C
oss  
Reverse Transfer Capacitance  
Turn-On-Time ton (ton=td(on)+tr)  
C
15  
rss  
t
4
d(on)  
t
12  
18  
40  
30  
r
Turn-Off-Time toff (ton=td(off)+tf)  
VGS=10V  
RGS=25 W  
t
25  
d(off)  
t
20  
f
Tch=25°C  
Avalanche Capability  
I
L = 100µH  
2
AV  
Continous Reverse Drain Current  
Pulsed Reverse Drain Current  
Diode Forward On-Voltage  
Reverse Recovery Time  
I
2
6
A
DR  
I
A
DRM  
IF=2xIDR VGS=0V Tch=25°C  
IF=IDR VGS=0V  
V
0,92  
500  
0,8  
1,41  
V
SD  
t
ns  
µC  
rr  
-dIF/dt=100A/µs Tch=25°C  
Reverse Recovery Charge  
Q
rr  
-
Thermal Characteristics  
Item  
Symbol  
Test conditions  
channel to air  
Min.  
Typ.  
Max.  
Unit  
Thermal Resistance  
R
°C/W  
th(ch-a)  
R
channel to case  
6,25 °C/W  
th(ch-c)  
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com  

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