是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Lifetime Buy | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.29 | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 1000 V |
最大漏极电流 (ID): | 4 A | 最大漏源导通电阻: | 3.8 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 12 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK1930(SM) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,1KV V(BR)DSS,4A I(D),TO-263ABVAR | |
2SK1930_06 | TOSHIBA |
获取价格 |
N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER | |
2SK1930TE24L | TOSHIBA |
获取价格 |
TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
2SK1930TE24R | TOSHIBA |
获取价格 |
TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
2SK1931 | SHINDENGEN |
获取价格 |
VR Series Power MOSFET(200V 5A) | |
2SK1933 | HITACHI |
获取价格 |
Silicon N-Channel MOS FET | |
2SK1933 | RENESAS |
获取价格 |
Silicon N Channel MOS FET | |
2SK1933-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET | |
2SK1934 | RENESAS |
获取价格 |
Silicon N Channel MOS FET | |
2SK1934 | HITACHI |
获取价格 |
Silicon N-Channel MOS FET |