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2SK1930(SM)

更新时间： 2024-09-29 13:04:27

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器稳压器开关电机高压驱动 DC-DC转换器斩波器
页数	文件大小	规格书
6页	846K
描述
TRANSISTOR,MOSFET,N-CHANNEL,1KV V(BR)DSS,4A I(D),TO-263ABVAR

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中文翻译

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技术参数
数据手册

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2SK1930(SM) 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	配置：	Single
最大漏极电流 (Abs) (ID)：	4 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	80 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

2SK1930(SM) 数据手册

2SK1930

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII^.5)

2SK1930

Chopper Regulator, DC−DC Converter, and Motor Drive

Applications

Unit: mm

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 3.0 Ω (typ.)

DS (ON)

: |Y | = 2.0 S (typ.)

z Low leakage current : I

= 300 μA (max) (V

= 800 V)

DSS

z Enhancement mode : V = 1.5~3.5 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

1000

±20

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Pulse (Note 1)

Drain current

Drain power dissipation (Tc = 25°C)

Channel temperature

100

°C

stg

150

Storage temperature range

−55~150

JEDEC

JEITA

―

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

TOSHIBA

2-10S1B

Weight: 1.5 g (typ.)

Thermal Characteristics

Characteristics

Symbol

Max

1.25

83.3

Unit

Thermal resistance, channel to case

°C / W

th (ch–c)

th (ch–a)

Thermal resistance, channel to

ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

This transistor is an electrostatic-sensitive device.

Please handle with caution.

JEDEC

JEITA

―

TOSHIBA

2-10S2B

Weight: 1.5 g (typ.)

2006-11-09

12 3 4 5 6

中文翻译

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与2SK1930(SM)相关器件

型号	品牌	获取价格	描述	数据表
2SK1930_06	TOSHIBA	获取价格	N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER
2SK1930TE24L	TOSHIBA	获取价格	TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
2SK1930TE24R	TOSHIBA	获取价格	TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
2SK1931	SHINDENGEN	获取价格	VR Series Power MOSFET(200V 5A)
2SK1933	HITACHI	获取价格	Silicon N-Channel MOS FET
2SK1933	RENESAS	获取价格	Silicon N Channel MOS FET
2SK1933-E	RENESAS	获取价格	Silicon N Channel MOS FET
2SK1934	RENESAS	获取价格	Silicon N Channel MOS FET
2SK1934	HITACHI	获取价格	Silicon N-Channel MOS FET
2SK1934-E	RENESAS	获取价格	Silicon N Channel MOS FET

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