2SK1930
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5)
2SK1930
Chopper Regulator, DC−DC Converter, and Motor Drive
Applications
Unit: mm
z Low drain−source ON resistance
z High forward transfer admittance
: R
= 3.0 Ω (typ.)
DS (ON)
: |Y | = 2.0 S (typ.)
fs
z Low leakage current : I
= 300 μA (max) (V
= 800 V)
DSS
DS
z Enhancement mode : V = 1.5~3.5 V (V
= 10 V, I = 1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Symbol
Rating
Unit
V
1000
1000
±20
V
V
V
DSS
Drain−gate voltage (R
Gate−source voltage
= 20 kΩ)
V
GS
DGR
V
GSS
DC (Note 1)
Pulse (Note 1)
I
4
D
Drain current
A
I
12
DP
Drain power dissipation (Tc = 25°C)
Channel temperature
P
100
W
°C
°C
D
ch
stg
T
150
Storage temperature range
T
−55~150
JEDEC
JEITA
―
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max
1.25
83.3
Unit
Thermal resistance, channel to case
R
°C / W
°C / W
th (ch–c)
th (ch–a)
Thermal resistance, channel to
ambient
R
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
JEDEC
JEITA
―
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
1
2006-11-09