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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| 2SK192A-Y | TOSHIBA |
获取价格 |
暂无描述 |
|
| 2SK193 | NEC |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-C |
|
| 2SK1930 | TOSHIBA |
获取价格 |
N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER |
|
| 2SK1930(2-10S1B) | TOSHIBA |
获取价格 |
TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10S1B, 3 PIN, |
|
| 2SK1930(2-10S2B) | TOSHIBA |
获取价格 |
TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, 2-10S2B, 3 PIN, |
|
| 2SK1930(SM) | TOSHIBA |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,1KV V(BR)DSS,4A I(D),TO-263ABVAR |
|
| 2SK1930_06 | TOSHIBA |
获取价格 |
N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER |
|
| 2SK1930TE24L | TOSHIBA |
获取价格 |
TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power |
|
| 2SK1930TE24R | TOSHIBA |
获取价格 |
TRANSISTOR 4 A, 1000 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power |
|
| 2SK1931 | SHINDENGEN |
获取价格 |
VR Series Power MOSFET(200V 5A) |
|
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英特尔震撼发布：128核心256线程的至强6性能核处理器
SK海力士量产12层HBM3E，容量高达36GB
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
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