2SK1544Q

更新时间： 2024-11-13 12:35:51

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器电机驱动
页数	文件大小	规格书
6页	381K
描述
DCâDC Converter and Motor Drive Applications

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中文翻译

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数据手册

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2SK1544Q 数据手册

2SK1544

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII^.5)

2SK1544

DC−DC Converter and Motor Drive Applications

Unit: mm

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 0.15 Ω (typ.)

DS (ON)

: |Y | = 21 S (typ.)

z Low leakage current

z Enhancement mode

: I

= 300 μA (max) (V

= 500 V)

DSS

: V = 1.5 to 3.5 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

500

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

±30

GSS

DC (Note 1)

Pulse (Note 1)

JEDEC

JEITA

―

Drain current

100

Drain power dissipation (Tc = 25°C)

Channel temperature

200

°C

stg

TOSHIBA

2-21F1B

150

Weight: 9.75 g (typ.)

Storage temperature range

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

0.625

35.7

Unit

Thermal resistance, channel to case

°C / W

th (ch−c)

th (ch−a)

Thermal resistance, channel to

ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2009-09-29

12 3 4 5 6

中文翻译

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