Datasheet > 2SK1530_09

2SK1530_09

更新时间： 2024-09-25 07:32:07

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器功率放大器
页数	文件大小	规格书
4页	383K
描述
High-Power Amplifier Application

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2SK1530_09 数据手册

2SK1530

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

2SK1530

Unit: mm

High-Power Amplifier Application

z High breakdown voltage

: V

= 200 V

DSS

z High forward transfer admittance

z Complementary to 2SJ201

: |Y | = 5.0 S (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

200

±20

DSS

Gate−source voltage

GSS

Drain current

(Note 1)

Drain power dissipation (Tc = 25°C)

Channel temperature

150

°C

stg

150

Storage temperature range

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.)

may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings. Please design the appropriate reliability

upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data

(i.e. reliability test report and estimated failure rate, etc).

JEDEC

JEITA

―

TOSHIBA

2-21F1B

Weight: 9.75 g (typ.)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Marking

Note 2: A line under a Lot No. identifies the indication of product

Labels.

Part No. (or abbreviation code)

Not underlined: [[Pb]]/INCLUDES > MCV

Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

TOSHIBA

2SK1530

Lot No.

Note 2

Please contact your TOSHIBA sales representative for details as to

environmental matters such as the RoHS compatibility of Product. The

RoHS is the Directive 2002/95/EC of the European Parliament and of

the Council of 27 January 2003 on the restriction of the use of certain

hazardous substances in electrical and electronic equipment.

JAPAN

Electrical Characteristics (Ta = 25°C)

Characteristics

Drain cut−off current

Symbol

Test Condition

Min

Typ.

Max

Unit

= 200 V, V

= 0

—

1.0

±0.5

—

μA

DSS

Gate leakage current

= 0V, V

= ±20 V

GSS

Drain−source breakdown voltage

Drain−source saturation voltage

Gate−source cut−off voltage (Note 3)

Forward transfer admittance

Input capacitance

= 10 mA, V

= 0

200

—

(BR) DSS

= 8 A, V

= 10 V

2.5

—

5.0

2.8

—

DS (ON)

= 10 V, I = 0.1 A

0.8

—

GS (OFF)

|Y |

= 10 V, I = 5 A

5.0

900

180

100

= 30 V, V

= 0, f = 1 MHz

—

iss

Output capacitance

—

oss

Reverse transfer capacitance

—

rss

Note 3:

Classification

0: 0.8 to 1.6 Y: 1.4 to 2.8

GS (OFF)

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2009-12-21

12 3 4

中文翻译

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与2SK1530_09相关器件

型号	品牌	获取价格	描述	数据表
2SK1530O	TOSHIBA	获取价格	High-Power Amplifier Application
2SK1530-O	TOSHIBA	获取价格	TRANSISTOR 12 A, 200 V, N-CHANNEL, Si, POWER, MOSFET, 2-21F1B, 3 PIN, FET General Purpose
2SK1530Y	TOSHIBA	获取价格	High-Power Amplifier Application
2SK1530-Y	TOSHIBA	获取价格	High-Power Amplifier Application
2SK1530-YF	TOSHIBA	获取价格	High-Power Amplifier Application
2SK1531	TOSHIBA	获取价格	Discrete Semiconductors
2SK1532	ETC	获取价格
2SK1532-B	HITACHI	获取价格	暂无描述
2SK1532-C	HITACHI	获取价格	Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction
2SK1532-D	HITACHI	获取价格	Small Signal Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Silicon, Junction

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