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2SK1070PIB01 PDF预览

2SK1070PIB01

更新时间: 2024-11-28 20:43:03
品牌 Logo 应用领域
瑞萨 - RENESAS 放大器光电二极管晶体管
页数 文件大小 规格书
3页 41K
描述
Small Signal Field-Effect Transistor, 0.05A I(D), 1-Element, N-Channel, Silicon, Junction FET, MPAK-3

2SK1070PIB01 技术参数

生命周期:Transferred包装说明:MPAK-3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.47配置:SINGLE
最大漏极电流 (ID):0.05 AFET 技术:JUNCTION
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3工作模式:DEPLETION MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON

2SK1070PIB01 数据手册

 浏览型号2SK1070PIB01的Datasheet PDF文件第2页浏览型号2SK1070PIB01的Datasheet PDF文件第3页 

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