2SJ652-RA11

更新时间： 2024-02-14 07:12:28

品牌	Logo	应用领域
安森美 - ONSEMI		晶体开关晶体管通用开关
页数	文件大小	规格书
7页	91K
描述
General-Purpose Switching Device Applications

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技术参数
数据手册

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2SJ652-RA11 技术参数

是否Rohs认证：	符合	生命周期：	End Of Life
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.56	端子面层：	Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Base Number Matches：	1

2SJ652-RA11 数据手册

2SJ 652

at Ta=25°C

Electrical Characteristics

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

--60

max

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

=--1mA, V =0V

(BR)DSS

D GS

=--60V, V =0V

--1

DSS

=±16V, V =0V

±10

GSS

(off)

=--10V, I =--1mA

--1.2

--2.6

yfs

DS D

Forward Transfer Admittance

=--10V, I =--14A

(on)1

(on)2

=--14A, V =--10V

28.5

Static Drain-to-Source On-State Resistance

=--14A, V =--4V

55.5

Input Capacitance

Ciss

4360

470

335

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Coss

Crss

=--20V, f=1MHz

(on)

210

310

180

See Fig.2

Turn-OFF Delay Time

Fall Time

(off)

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

Qgs

Qgd

=--30V, V =--10V, I =--28A

I =--28A, V =0V

S GS

--0.96

--1.2

Fig.1 Avalanche Resistance Test Circuit

Fig.2 Switching Time Test Circuit

V = --30V

--10V

≥50Ω

= --14A

R =2.1Ω

OUT

2SJ652

PW=10μs

D.C.≤1%

--10V

50Ω

2SJ652

P. G

50Ω

Ordering Information

Device

Package

Shipping

memo

2SJ652-1E

TO-220F-3SG

50pcs./magazine

Pb Free

No.7625-2/7

123 4 5 6 7

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