Datasheet > 2SJ557(0)-T1B-AT

2SJ557(0)-T1B-AT

更新时间： 2024-01-20 17:38:50

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
10页	222K
描述
Switching P-Channel Power MOSFET, TMM, /Embossed Tape

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技术参数
数据手册

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2SJ557(0)-T1B-AT 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	TMM
包装说明：	,	针数：	3
Reach Compliance Code：	compliant	风险等级：	5.68
JESD-609代码：	e3	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	Matte Tin (Sn)	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

2SJ557(0)-T1B-AT 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SJ557

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit : mm)

The 2SJ557 is a switching device which can be driven directly

by a 4 V power source.

+0.1

–0.05

0.4

+0.1

–0.06

0.16

The 2SJ557 features a low on-state resistance and excellent

switching characteristics, and is suitable for applications such

as power switch of portable machine and so on.

0 to 0.1

FEATURES

• Can be driven by a 4 V power source

• Low on-state resistance

0.65

0.95 0.95

1.9

R^DS(on)1= 155 mΩ MAX. (V^GS= –10 V, I^D= –1.0 A)

R^DS(on)2= 255 mΩ MAX. (V^GS= –4.5 V, I^D= –1.0 A)

R^DS(on)3= 290 mΩ MAX. (V^GS= –4.0 V, I^D= –1.0 A)

0.9 to 1.1

2.9 ±0.2

: Gate

ORDERING INFORMATION

2 : Source

3 : Drain

PART NUMBER

2SJ557

PACKAGE

EQUIVALENT CIRCUIT

★

SC-96 (Mini Mold Thin Type)

Drain

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Body

Diode

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Drain Current (pulse) ^Note1

Total Power Dissipation

Total Power Dissipation ^Note2

Channel Temperature

Storage Temperature

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T1

–30

–20 / +5

±2.5

±10

Gate

Protection

Diode

Source

0.2

°C

Marking: XB

P^T2

1.25

150

T^ch

T^stg

–55 to +150 °C

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %

2. Mounted on FR-4 Board, t ≤ 5 sec.

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published May 2001 NS CP(K)

Printed in Japan

D13292EJ2V0DS00 (2nd edition)

The mark ★ shows major revised points.

1998, 1999

1 234 5 6 7...10

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