Datasheet > 2SJ562

2SJ562

更新时间： 2024-02-14 20:49:36

品牌	Logo	应用领域
三洋 - SANYO		开关
页数	文件大小	规格书
4页	149K
描述
Ultrahigh-Speed Switching Applications

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2SJ562 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PSSO-F3
针数：	3	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.83
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	20 V	最大漏极电流 (Abs) (ID)：	2 A
最大漏极电流 (ID)：	2 A	最大漏源导通电阻：	0.315 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PSSO-F3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	3.5 W	最大脉冲漏极电流 (IDM)：	8 A
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	YES	端子形式：	FLAT
端子位置：	SINGLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

2SJ562 数据手册

Ordering number:ENN6096A

P-Channel Silicon MOSFET

2SJ562

Ultrahigh-Speed Switching Applications

Features

Package Dimensions

· Low ON-resistance.

· Ultrahigh-speed switching.

· 2.5V drive.

unit:mm

2062A

[2SJ562]

4.5

1.5

1.6

0.4

0.5

0.4

1.5

3.0

1 : Gate

0.75

2 : Drain

3 : Source

SANYO : PCP

(Bottom view)

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Drain-to-Source Voltage

Symbol

Conditions

Ratings

Unit

–20

±10

–2

DSS

Gate-to-Source Voltage

Drain Current (DC)

GSS

PW≤10µs, duty cycle≤1%

Drain Current (Pulse)

–8

Mounted on a ceramic board (250mm²× 0.8mm)

1.5

3.5

150

Allowable Power Dissipation

Tc=25˚C

˚C

Channel Temperature

Storage Temperature

Tch

˚C

Tstg

–55 to +150

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

–20

max

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

=–1mA, V =0

D GS

µA

(BR)DSS

=–20V, V =0

–10

DSS

=±8V, V =0

±10

GSS

=–10V, I =–1mA

–0.4

1.8

–1.4

GS(off)

| yfs |

Forward Transfer Admittance

=–10V, I =–1A

2.6

=–1A, V =–4V

245

340

315

480

mΩ

DS(on)

Static Drain-to-Source On-State Resistance

=–200mA, V =–2.5V

Marking : JN

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71000TS (KOTO) TA-1695 No.6096–1/4

12 3 4

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