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2SJ574 PDF预览

2SJ574

更新时间: 2024-01-18 03:23:57
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体开关晶体管场效应晶体管
页数 文件大小 规格书
10页 58K
描述
Silicon P Channel MOS FET High Speed Switching

2SJ574 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:MPAK
针数:3Reach Compliance Code:compliant
风险等级:5.69配置:Single
最大漏极电流 (Abs) (ID):0.3 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高工作温度:150 °C峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):0.4 W
子类别:Other Transistors表面贴装:YES
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

2SJ574 数据手册

 浏览型号2SJ574的Datasheet PDF文件第2页浏览型号2SJ574的Datasheet PDF文件第3页浏览型号2SJ574的Datasheet PDF文件第4页浏览型号2SJ574的Datasheet PDF文件第5页浏览型号2SJ574的Datasheet PDF文件第6页浏览型号2SJ574的Datasheet PDF文件第7页 
To all our customers  
Regarding the change of names mentioned in the document, such as Hitachi  
Electric and Hitachi XX, to Renesas Technology Corp.  
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas  
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog  
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)  
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand  
names are mentioned in the document, these names have in fact all been changed to Renesas  
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and  
corporate statement, no changes whatsoever have been made to the contents of the document, and  
these changes do not constitute any alteration to the contents of the document itself.  
Renesas Technology Home Page: http://www.renesas.com  
Renesas Technology Corp.  
Customer Support Dept.  
April 1, 2003  

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