Datasheet > 2SJ581-AZ

2SJ581-AZ

更新时间： 2024-01-22 12:43:20

品牌	Logo	应用领域
瑞萨 - RENESAS		开关脉冲晶体管
页数	文件大小	规格书
4页	38K
描述
12A, 60V, 0.185ohm, P-CHANNEL, Si, POWER, MOSFET, MP-10, ISOLATED TO-220, 3 PIN

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2SJ581-AZ 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	SFM	包装说明：	IN-LINE, R-PSIP-T3
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
风险等级：	5.21	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	60 V	最大漏极电流 (Abs) (ID)：	12 A
最大漏极电流 (ID)：	12 A	最大漏源导通电阻：	0.185 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PSIP-T3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	IN-LINE	峰值回流温度（摄氏度）：	260
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	1.8 W
最大脉冲漏极电流 (IDM)：	48 A	认证状态：	Not Qualified
子类别：	Other Transistors	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

2SJ581-AZ 数据手册

PRELIMINARY PRODUCT INFORMATION

MOS FIELD EFFECT TRANSISTOR

2SJ581

SWITCHING

P-CHANNEL POWER MOS FET

INDUSTRIAL USE

DESCRIPTION

ORDERING INFORMATION

The 2SJ581 is P-Channel DMOS Field Effect Transistor that

features a low on-resistance and excellent switching

characteristics, designed for high current switching applications

such as DC to DC converter and load switch.

PART NUMBER

2SJ581

PACKAGE

MP-10

FEATURES

• Low on-state resistance :

DS(on)1

= 70 mΩ TYP. (V = −10 V, I = −6 A)

DS(on)2

= 120 mΩ TYP. (V = −4 V, I = −6 A)

• Low input capacitance :

iss

= 1210 pF TYP. (V = −10 V, f = 1MHz)

• Narrow gate cut-off voltage width :

GS(off)

= −1.0 to −2.0 V

• Built-in gate protection diode.

• Suitable to automatically assembling.

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

DSS

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

−60

±20

GSS(AC)

GSS(DC)

−20, 0

±12

D(DC)

Drain Current (pulse) ^Note

D(pulse)

±48

Total Power Dissipation (T = 25 °C)

1.8

°C

Channel Temperature

150

stg

Storage Temperature

−55 to +150 °C

Note PW ≤ 10 µs, Duty Cycle ≤ 1 %

The information contained in this document is being issued in advance of the production cycle for the

device. The parameters for the device may change before final production or NEC Corporation, at its own

discretion, may withdraw the device prior to its production.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D14113EJ1V0PM00

Date Published February 1999 NS CP (K)

Printed in Japan

1999

12 3 4

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