生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.34 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 250 V |
最大漏极电流 (Abs) (ID): | 3 A | 最大漏极电流 (ID): | 3 A |
最大漏源导通电阻: | 2 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 50 W |
最大脉冲漏极电流 (IDM): | 12 A | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SJ578 | SANYO | Ultrahigh-Speed Switching Applications |
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2SJ579 | SANYO | Ultrahigh-Speed Switching Applications |
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2SJ580 | SANYO | Ultrahigh-Speed Switching Applications |
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2SJ581 | NEC | Power Field-Effect Transistor, 12A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Met |
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2SJ581 | RENESAS | 12A, 60V, 0.185ohm, P-CHANNEL, Si, POWER, MOSFET, MP-10, ISOLATED TO-220, 3 PIN |
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2SJ581-AZ | RENESAS | 12A, 60V, 0.185ohm, P-CHANNEL, Si, POWER, MOSFET, MP-10, ISOLATED TO-220, 3 PIN |
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