Datasheet > 2SJ577

2SJ577

更新时间： 2024-01-26 01:48:56

品牌	Logo	应用领域
三洋 - SANYO		开关
页数	文件大小	规格书
4页	43K
描述
Ultrahigh-Speed Switching Applications

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技术参数
数据手册

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2SJ577 技术参数

生命周期：	Transferred	包装说明：	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.29.00.95	风险等级：	5.34
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	250 V
最大漏极电流 (Abs) (ID)：	3 A	最大漏极电流 (ID)：	3 A
最大漏源导通电阻：	2 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PSSO-G2	元件数量：	1
端子数量：	2	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	50 W
最大脉冲漏极电流 (IDM)：	12 A	认证状态：	Not Qualified
子类别：	Other Transistors	表面贴装：	YES
端子形式：	GULL WING	端子位置：	SINGLE
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

2SJ577 数据手册

2SJ577

-- Ta

-- Tc

2.0

1.65

1.6

1.2

0.8

0.4

100

120

140

160

100

120

140

160

Ambient Temperature, Ta – ˚C

Case Temperature, Tc – ˚C

IT01483

IT01484

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer's

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be exported without obtaining the export license from the authorities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co., Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of September, 2000. Specifications and information herein are

subject to change without notice.

PS No.6411–4/4

1 2 34

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与2SJ577相关器件

型号	品牌	描述	获取价格	数据表
2SJ578	SANYO	Ultrahigh-Speed Switching Applications	获取价格
2SJ579	SANYO	Ultrahigh-Speed Switching Applications	获取价格
2SJ580	SANYO	Ultrahigh-Speed Switching Applications	获取价格
2SJ581	NEC	Power Field-Effect Transistor, 12A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Met	获取价格
2SJ581	RENESAS	12A, 60V, 0.185ohm, P-CHANNEL, Si, POWER, MOSFET, MP-10, ISOLATED TO-220, 3 PIN	获取价格
2SJ581-AZ	RENESAS	12A, 60V, 0.185ohm, P-CHANNEL, Si, POWER, MOSFET, MP-10, ISOLATED TO-220, 3 PIN	获取价格

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