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2SJ577 PDF预览

2SJ577

更新时间: 2024-02-23 22:57:33
品牌 Logo 应用领域
三洋 - SANYO 开关
页数 文件大小 规格书
4页 43K
描述
Ultrahigh-Speed Switching Applications

2SJ577 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.34
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:250 V
最大漏极电流 (Abs) (ID):3 A最大漏极电流 (ID):3 A
最大漏源导通电阻:2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):50 W
最大脉冲漏极电流 (IDM):12 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SJ577 数据手册

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2SJ577  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
–250  
±30  
–3  
V
V
DSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
GSS  
I
A
D
Drain Current (Pulse)  
I
PW10µs, duty cycle1%  
–12  
1.65  
50  
A
DP  
W
W
˚C  
Allowable Power Dissipation  
P
D
Tc=25˚ C  
Channel Temperature  
Storage Temperature  
Tch  
150  
˚C  
Tstg  
–55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Drain-to-Source Breakdown Voltage  
Gate-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
V
I
I
=–1mA, V =0  
D GS  
–250  
±30  
V
V
(BR)DSS  
=±100µA, V =0  
(BR)GSS  
G
DS  
I
V
V
V
V
I
=–250V, V =0  
GS  
=±25V, V =0  
DS  
=–10V, I =–1mA  
D
=–10V, I =–1.5A  
D
–100  
±10  
µA  
µA  
V
DSS  
DS  
GS  
DS  
DS  
I
GSS  
V
(off)  
–1.5  
1.5  
–2.5  
GS  
| yfs |  
Forward Transfer Admittance  
Static Drain-to-Source ON-State Resistance  
Input Capacitance  
2.5  
S
R
(on)  
=–1.5A, V =–10V  
GS  
1.5  
600  
110  
50  
2.0  
DS  
D
Ciss  
V
V
V
=–20V, f=1MHz  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V
DS  
Output Capacitance  
Coss  
Crss  
=–20V, f=1MHz  
DS  
=–20V, f=1MHz  
DS  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
t
See specified Test Circuit  
See specified Test Circuit  
See specified Test Circuit  
See specified Test Circuit  
I =–3A, V =0  
14  
d(on)  
Rise Time  
t
18  
r
Turn-OFF Delay Time  
t
75  
d(off)  
Fall Time  
t
f
65  
Diode Forward Voltage  
V
–1.0  
–1.5  
SD  
S
GS  
Switching Time Test Circuit  
V
=--100V  
DD  
V
IN  
0V  
--10V  
I
=--1.5A  
D
R =66.7  
L
V
IN  
G
V
D
OUT  
PW=10µs  
D.C.1%  
P.G  
50Ω  
2SJ577  
S
No.6411–2/4  

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