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2SJ553(S)-(1) PDF预览

2SJ553(S)-(1)

更新时间: 2024-01-12 17:19:07
品牌 Logo 应用领域
日立 - HITACHI /
页数 文件大小 规格书
12页 63K
描述
Transistor

2SJ553(S)-(1) 技术参数

生命周期:ObsoleteReach Compliance Code:compliant
风险等级:5.84配置:Single
最大漏极电流 (Abs) (ID):30 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):75 W
子类别:Other Transistors表面贴装:YES
Base Number Matches:1

2SJ553(S)-(1) 数据手册

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2SJ553(L),2SJ553(S)  
Package Dimensions  
As of January, 2001  
Unit: mm  
4.44 ± 0.2  
1.3 ± 0.15  
10.2 ± 0.3  
2.59 ± 0.2  
1.2 ± 0.2  
1.27 ± 0.2  
+ 0.2  
– 0.1  
0.86  
0.76 ± 0.1  
2.54 ± 0.5  
0.4 ± 0.1  
2.54 ± 0.5  
Hitachi Code  
JEDEC  
EIAJ  
LDPAK (L)  
Mass (reference value)  
1.4 g  
9

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