生命周期: | Obsolete | Reach Compliance Code: | compliant |
风险等级: | 5.84 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 30 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 75 W |
子类别: | Other Transistors | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SJ553(S)-(2) | HITACHI | TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,30A I(D),TO-263AB |
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2SJ553L | HITACHI | Silicon P Channel MOS FET High Speed Power Switching |
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2SJ553L | RENESAS | Silicon P Channel MOS FET |
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2SJ553L-E | RENESAS | Silicon P Channel MOS FET |
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2SJ553S | HITACHI | Silicon P Channel MOS FET High Speed Power Switching |
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2SJ553S | RENESAS | Silicon P Channel MOS FET |
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2SJ553S-E | RENESAS | 30A, 60V, 0.055ohm, P-CHANNEL, Si, POWER, MOSFET, LDPAK-3 |
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2SJ553STL-E | RENESAS | Silicon P Channel MOS FET |
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2SJ553STR-E | RENESAS | Pch Single Power MOSFET -60V -30A 37mohm LDPAK(S)-(1)/TO-263 |
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2SJ554 | RENESAS | Silicon P Channel MOS FET |
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2SJ554 | HITACHI | Silicon P Channel MOS FET High Speed Power Switching |
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2SJ554-E | RENESAS | Silicon P Channel MOS FET |
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2SJ555 | HITACHI | Silicon P Channel MOS FET High Speed Power Switching |
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2SJ555 | RENESAS | Silicon P Channel MOS FET |
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2SJ555-E | RENESAS | Silicon P Channel MOS FET |
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2SJ556 | RENESAS | 0.055ohm, POWER, FET, TO-3PFM, 3 PIN |
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2SJ557 | NEC | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
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2SJ557 | TYSEMI | switching device |
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2SJ557 | RENESAS | 2500mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-96, 3 PIN |
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2SJ557(0)-T1B-AT | RENESAS | Switching P-Channel Power MOSFET, TMM, /Embossed Tape |
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