生命周期: | Active | Reach Compliance Code: | compliant |
风险等级: | 5.61 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 20 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 75 W |
子类别: | Other Transistors | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SJ552L | HITACHI |
获取价格 |
Silicon P Channel MOS FET High Speed Power Switching | |
2SJ552L | RENESAS |
获取价格 |
Silicon P Channel MOS FET | |
2SJ552L-E | RENESAS |
获取价格 |
Silicon P Channel MOS FET | |
2SJ552S | RENESAS |
获取价格 |
Silicon P Channel MOS FET | |
2SJ552S | HITACHI |
获取价格 |
Silicon P Channel MOS FET High Speed Power Switching | |
2SJ552STL-E | RENESAS |
获取价格 |
Silicon P Channel MOS FET | |
2SJ553 | HITACHI |
获取价格 |
Silicon P Channel MOS FET High Speed Power Switching | |
2SJ553 | RENESAS |
获取价格 |
Silicon P Channel MOS FET | |
2SJ553(L) | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-262VAR | |
2SJ553(L)|2SJ553(S) | ETC |
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