2SJ550

更新时间： 2024-11-09 06:26:31

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2SJ550 数据手册

2SJ550(L), 2SJ550(S)

Silicon P Channel MOS FET

REJ03G0897-0300

(Previous: ADE-208-633A)

Rev.3.00

Sep 07, 2005

Description

High speed power switching

Features

•

Low on-resistance

R_{DS (on)}= 0.075 Ω typ.

Low drive current.

4 V gate drive devices.

High speed switching.

•

Outline

RENESAS Package code: PRSS0004AE-A

(Package name: LDPAK (L) )

RENESAS Package code: PRSS0004AE-B

(Package name: LDPAK (S)-(1) )

1. Gate

2. Drain

3. Source

4. Drain

Rev.3.00 Sep 07, 2005 page 1 of 8

12 3 4 5 6 7...9

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型号	品牌	获取价格	描述	数据表
2SJ550(L)	HITACHI	获取价格	Power Field-Effect Transistor, 0.155ohm, P-Channel, Metal-oxide Semiconductor FET, LDPAK-3
2SJ550(L)	RENESAS	获取价格	0.155ohm, POWER, FET, LDPAK-3
2SJ550(L)\|2SJ550(S)	ETC	获取价格
2SJ550(S)	HITACHI	获取价格	Power Field-Effect Transistor, 0.155ohm, LDPAK-3
2SJ550(S)	RENESAS	获取价格	0.155ohm, POWER, FET, LDPAK-3
2SJ550L	HITACHI	获取价格	Silicon P Channel MOS FET High Speed Power Switching
2SJ550L	RENESAS	获取价格	Silicon P Channel MOS FET
2SJ550L-E	RENESAS	获取价格	Silicon P Channel MOS FET
2SJ550S	RENESAS	获取价格	Silicon P Channel MOS FET
2SJ550S	HITACHI	获取价格	Silicon P Channel MOS FET High Speed Power Switching