Datasheet > 2SJ530(S)-(3)

2SJ530(S)-(3)

更新时间： 2024-02-08 14:02:29

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2SJ530(S)-(3) 数据手册

2SJ530(L), 2SJ530(S)

Silicon P Channel MOS FET

High Speed Power Switching

ADE-208-655C (Z)

4th. Edition

Mar. 2001

Features

•

Low on-resistance

R_DS(on)= 0.08Ω typ.

4V gate drive devices.

High speed switching.

•

Outline

DPAK–2

1. Gate

2. Drain

3. Source

4. Drain

12 3 4 5 6 7...11

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型号	品牌	获取价格	描述	数据表
2SJ530L	HITACHI	获取价格	Silicon P Channel MOS FET High Speed Power Switching
2SJ530L	RENESAS	获取价格	Silicon P Channel MOS FET
2SJ530L-E	RENESAS	获取价格	Silicon P Channel MOS FET
2SJ530S	RENESAS	获取价格	Silicon P Channel MOS FET
2SJ530S	KEXIN	获取价格	Hight Speed Power Switching
2SJ530S	HITACHI	获取价格	Silicon P Channel MOS FET High Speed Power Switching
2SJ530S-E	RENESAS	获取价格	15A, 60V, 0.16ohm, P-CHANNEL, Si, POWER, MOSFET, DPAK-3
2SJ530STL-E	RENESAS	获取价格	Silicon P Channel MOS FET
2SJ531	HITACHI	获取价格	Silicon P Channel MOS FET High Speed Power Switching
2SJ531	RENESAS	获取价格	Silicon P Channel MOS FET