Datasheet > 2SJ537_06

2SJ537_06

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器稳压器电机驱动 DC-DC转换器
页数	文件大小	规格书
6页	266K
描述
Silicon P Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications

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2SJ537_06 数据手册

2SJ537

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L −π−MOSVI)

2SJ537

Chopper Regulator, DC−DC Converter and Motor Drive

Applications

Unit: mm

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 0.16 Ω (typ.)

DS (ON)

: |Y | = 3.5 S (typ.)

z Low leakage current : I

= −100 μA (V

= −50 V)

DSS

z Enhancement−mode : V = −0.8~−2.0 V (V

= −10 V, I = −1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

−50

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

±20

GSS

JEDEC

JEITA

TO-92MOD

DC (Note 1)

Pulse (Note 1)

−5

Drain current

−15

―

Drain power dissipation

Channel temperature

0.9

°C

stg

TOSHIBA

2-5J1C

150

Weight: 0.36 g (typ.)

Storage temperature range

−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

138

Unit

Thermal resistance, channel to

ambient

°C / W

th (ch−a)

Note 1: Please use devices on condition that the channel temperature is below 150°C.

This transistor is an electrostatic sensitive device.

Please handle with caution.

2006-11-16

12 3 4 5 6

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