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2SJ280(S) PDF预览

2SJ280(S)

更新时间: 2024-01-19 07:43:43
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关脉冲
页数 文件大小 规格书
9页 50K
描述
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-263AB

2SJ280(S) 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:unknown
风险等级:5.28Is Samacsys:N
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):30 A
最大漏源导通电阻:0.06 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
最大脉冲漏极电流 (IDM):120 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SJ280(S) 数据手册

 浏览型号2SJ280(S)的Datasheet PDF文件第1页浏览型号2SJ280(S)的Datasheet PDF文件第2页浏览型号2SJ280(S)的Datasheet PDF文件第4页浏览型号2SJ280(S)的Datasheet PDF文件第5页浏览型号2SJ280(S)的Datasheet PDF文件第6页浏览型号2SJ280(S)的Datasheet PDF文件第7页 
2SJ280(L), 2SJ280(S)  
Electrical Characteristics  
(Ta = 25°C)  
Item  
Symbol Min  
Typ  
Max  
Unit  
Test conditions  
Drain to source breakdown  
voltage  
V(BR)DSS  
V(BR)GSS  
IGSS  
–60  
V
ID = –10 mA, VGS = 0  
Gate to source breakdown  
voltage  
±20  
V
IG = ±200 µA, VDS = 0  
Gate to source leak current  
±10  
µA  
µA  
V
VGS = ±16 V, VDS = 0  
Zero gate voltage drain current IDSS  
–250  
–2.25  
VDS = –50 V, VGS = 0  
Gate to source cutoff voltage  
VGS(off)  
–1.0  
ID = –1 mA, VDS = –10 V  
ID = –15 A, VGS = –10 V*1  
Static drain to source on state RDS(on)  
resistance  
0.033 0.043  
17  
0.045 0.06  
ID = –15 A, VGS = –4 V*1  
ID = –15 A, VDS = –10 V*1  
Forward transfer admittance  
Input capacitance  
|yfs|  
25  
S
Ciss  
3300  
pF  
VDS = –10 V, VGS = 0,  
f = 1 MHz  
Output capacitance  
Coss  
1500  
480  
30  
pF  
pF  
ns  
Reverse transfer capacitance Crss  
Turn-on delay time  
td(on)  
ID = –15 A, VGS = –10 V,  
RL = 2 Ω  
Rise time  
tr  
170  
500  
390  
–1.5  
ns  
ns  
ns  
V
Turn-off delay time  
Fall time  
td(off)  
tf  
Body to drain diode forward  
voltage  
VDF  
IF = –30 A, VGS = 0  
Body to drain diode reverse  
recovery time  
trr  
200  
ns  
IF = –30 A, VGS = 0,  
diF/dt = 50 A/µs  
Note 1. Pulse test  
3

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