Datasheet > 2SD968AR

2SD968AR

更新时间： 2024-10-01 23:20:35

品牌	Logo	应用领域
其他 - ETC		晶体晶体管放大器
页数	文件大小	规格书
3页	66K
描述
TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 500MA I(C) \| SC-62

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中文翻译

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数据手册

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2SD968AR 数据手册

Transistor

2SD0968, 2SD0968A (2SD968, 2SD968A)

Silicon NPN epitaxial planer type

For low-frequency driver amplification

Unit: mm

Complementary to 2SB0789 (2SB789) and 2SB0789A (2SB789A)

1.5 0.1

4.5 0.1

1.6 0.2

Features

High collector to emitter voltage V_CEO

Large collector power dissipation P_C.

45°

Mini Power type package, allowing downsizing of the equipment

and automatic insertion through the tape packing and the maga-

zine packing.

0.4 0.08

0.4 0.04

0.5 0.08

1.5 0.1

3.0 0.15

Absolute Maximum Ratings (Ta=25˚C)

Parameter

2SD0968

Symbol

Ratings

Unit

Collector to

100

V_CBO

marking

base voltage

Collector to

2SD0968A

2SD0968

2SD0968A

120

100

V_CEO

emitter voltage

120

1:Base

2:Collector

3:Emitter

EIAJ:SC–62

Mini Power Type Package

Emitter to base voltage

Peak collector current

Collector current

V_EBO

I_CP

(2SD0968)

Marking symbol : W

I_C

0.5

(2SD0968A)

Collector power dissipation

Junction temperature

Storage temperature

P_C

˚C

T_j

150

T_stg

–55 ~ +150

Printed circuit board: Copper foil area of 1cm²or more, and the board

thickness of 1.7mm for the collector portion

Electrical Characteristics (Ta=25˚C)

Parameter

Symbol

V_CEO

V_EBO

Conditions

I_C= 100µA, I_B= 0

min

100

120

typ

max

Unit

Collector to emitter 2SD0968

voltage

2SD0968A

Emitter to base voltage

I_E= 10µA, I_C= 0

V_CE= 10V, I_C= 150mA^*2

V_CE= 5V, I_C= 500mA^*2

I_C= 500mA, I_B= 50mA^*2

V_CB= 10V, I_E= –50mA, f = 200MHz

V_CB= 10V, I_E= 0, f = 1MHz

220

h_FE1

h_FE2

Forward current transfer ratio

100

0.2

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

0.6

1.2

0.85

120

Transition frequency

f_T

MHz

Collector output capacitance

C_ob

^*2Pulse measurement

FE1

Rank classification

Rank

h_FE1

90 ~ 155

130 ~ 220

2SD0968

Marking

Symbol

Note.) The Part numbers in the Parenthesis show conventional

part number.

2SD0968A

12 3

中文翻译

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与2SD968AR相关器件

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2SD968AS	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, ROHS C
2SD968ATX	PANASONIC	获取价格	暂无描述
2SD968H	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon
2SD968Q	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 500MA I(C) \| SC-62
2SD968R	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 500MA I(C) \| SC-62
2SD968TX	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon
2SD969	PANASONIC	获取价格	Silicon PNP epitaxial planer type(Silicon PNP epitaxial planer type)
2SD970	HITACHI	获取价格	Silicon NPN Triple Diffused
2SD970	ISC	获取价格	Silicon NPN Power Transistors
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