2SD973AQ

更新时间： 2024-02-02 04:25:20

品牌	Logo	应用领域
松下 - PANASONIC		晶体小信号双极晶体管放大器
页数	文件大小	规格书
3页	51K
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中文翻译

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数据手册

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2SD973AQ 数据手册

Transistor

2SD973, 2SD973A

Silicon NPN epitaxial planer type

For low-frequency power amplification

Unit: mm

6.9±0.1

2.5±0.1

1.5

1.5 R0.9

1.0

Features

■

R0.9

●

Low collector to emitter saturation voltage V_CE(sat)

●

M type package allowing easy automatic and manual insertion as

well as stand-alone fixing to the printed circuit board.

R0.7

0.85

Absolute Maximum Ratings (Ta=25˚C)

■

0.55±0.1

0.45±0.05

Parameter

Symbol

Ratings

Unit

Collector to

2SD973

2SD973A

2SD973

V_CBO

base voltage

Collector to

V_CEO

emitter voltage 2SD973A

Emitter to base voltage

Peak collector current

Collector current

2.5

V_EBO

I_CP

1:Base

1.5

2:Collector

3:Emitter

EIAJ:SC–71

M Type Mold Package

I_C

Collector power dissipation

Junction temperature

Storage temperature

P_C

˚C

T_j

150

T_stg

–55 ~ +150

Printed circuit board: Copper foil area of 1cm²or more, and the board

thickness of 1.7mm for the collector portion

Electrical Characteristics (Ta=25˚C)

■

Parameter

Symbol

I_CBO

Conditions

V_CB= 20V, I_E= 0

min

typ

max

Unit

Collector cutoff current

0.1

µA

Collector to base

voltage

2SD973

2SD973A

V_CBO

I_C= 10µA, I_E= 0

Collector to emitter 2SD973

V_CEO

V_EBO

I_C= 2mA, I_B= 0

voltage

2SD973A

Emitter to base voltage

I_E= 10µA, I_C= 0

h_FE1

h_FE2

V_CE= 10V, I_C= 500mA^*2

V_CE= 5V, I_C= 1A^*2

160

100

0.2

340

Forward current transfer ratio

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

I_C= 500mA, I_B= 50mA^*2

0.4

1.2

0.85

200

Transition frequency

f_T

V_CB= 10V, I_E= –50mA, f = 200MHz

V_CB= 10V, I_E= 0. f = 1MHz

MHz

Collector output capacitance

C_ob

^*2Pulse measurement

Rank classification

FE1

Rank

h_FE1

85 ~ 170

120 ~ 240

170 ~ 340

12 3

中文翻译

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