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2SD973AS PDF预览

2SD973AS

更新时间: 2024-02-16 23:16:26
品牌 Logo 应用领域
松下 - PANASONIC 晶体小信号双极晶体管放大器
页数 文件大小 规格书
3页 51K
描述
Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, M-A1, 3 PIN

2SD973AS 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.82
最大集电极电流 (IC):1 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):170
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

2SD973AS 数据手册

 浏览型号2SD973AS的Datasheet PDF文件第2页浏览型号2SD973AS的Datasheet PDF文件第3页 
Transistor  
2SD973, 2SD973A  
Silicon NPN epitaxial planer type  
For low-frequency power amplification  
Unit: mm  
6.9±0.1  
2.5±0.1  
1.5  
1.5 R0.9  
1.0  
Features  
R0.9  
Low collector to emitter saturation voltage VCE(sat)  
.
M type package allowing easy automatic and manual insertion as  
well as stand-alone fixing to the printed circuit board.  
R0.7  
0.85  
Absolute Maximum Ratings (Ta=25˚C)  
0.55±0.1  
0.45±0.05  
Parameter  
Symbol  
Ratings  
Unit  
Collector to  
2SD973  
2SD973A  
2SD973  
30  
VCBO  
V
3
2
1
base voltage  
Collector to  
60  
25  
VCEO  
V
emitter voltage 2SD973A  
Emitter to base voltage  
Peak collector current  
Collector current  
50  
2.5  
2.5  
VEBO  
ICP  
5
V
A
1:Base  
1.5  
2:Collector  
3:Emitter  
EIAJ:SC–71  
M Type Mold Package  
IC  
1
A
*
Collector power dissipation  
Junction temperature  
Storage temperature  
PC  
1
W
˚C  
˚C  
Tj  
150  
Tstg  
–55 ~ +150  
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board  
thickness of 1.7mm for the collector portion  
Electrical Characteristics (Ta=25˚C)  
Parameter  
Symbol  
ICBO  
Conditions  
VCB = 20V, IE = 0  
min  
typ  
max  
Unit  
Collector cutoff current  
0.1  
µA  
Collector to base  
voltage  
2SD973  
2SD973A  
30  
60  
25  
50  
5
VCBO  
IC = 10µA, IE = 0  
V
Collector to emitter 2SD973  
VCEO  
VEBO  
IC = 2mA, IB = 0  
V
V
voltage  
2SD973A  
Emitter to base voltage  
IE = 10µA, IC = 0  
*1  
hFE1  
hFE2  
VCE = 10V, IC = 500mA*2  
VCE = 5V, IC = 1A*2  
85  
50  
160  
100  
0.2  
340  
Forward current transfer ratio  
Collector to emitter saturation voltage VCE(sat)  
Base to emitter saturation voltage VBE(sat)  
IC = 500mA, IB = 50mA*2  
IC = 500mA, IB = 50mA*2  
0.4  
1.2  
V
V
0.85  
200  
11  
Transition frequency  
fT  
VCB = 10V, IE = –50mA, f = 200MHz  
VCB = 10V, IE = 0. f = 1MHz  
MHz  
pF  
Collector output capacitance  
Cob  
20  
*2 Pulse measurement  
*1  
h
Rank classification  
FE1  
Rank  
hFE1  
Q
R
S
85 ~ 170  
120 ~ 240  
170 ~ 340  
1

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