Transistor
2SD0968, 2SD0968A (2SD968, 2SD968A)
Silicon NPN epitaxial planer type
For low-frequency driver amplification
Unit: mm
Complementary to 2SB0789 (2SB789) and 2SB0789A (2SB789A)
1.5 0.1
4.5 0.1
1.6 0.2
Features
High collector to emitter voltage VCEO
I
G
.
G
Large collector power dissipation PC.
45°
G
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
0.4 0.08
0.4 0.04
0.5 0.08
1.5 0.1
3.0 0.15
2
Absolute Maximum Ratings (Ta=25˚C)
I
3
1
Parameter
2SD0968
Symbol
Ratings
Unit
Collector to
100
VCBO
V
marking
base voltage
Collector to
2SD0968A
2SD0968
2SD0968A
120
100
VCEO
V
emitter voltage
120
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Emitter to base voltage
Peak collector current
Collector current
VEBO
ICP
5
V
A
1
(2SD0968)
Marking symbol : W
IC
0.5
1
A
(2SD0968A)
V
*
Collector power dissipation
Junction temperature
Storage temperature
PC
W
˚C
˚C
Tj
150
Tstg
–55 ~ +150
*
Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
Electrical Characteristics (Ta=25˚C)
I
Parameter
Symbol
VCEO
VEBO
Conditions
IC = 100µA, IB = 0
min
100
120
5
typ
max
Unit
V
Collector to emitter 2SD0968
voltage
2SD0968A
Emitter to base voltage
IE = 10µA, IC = 0
V
VCE = 10V, IC = 150mA*2
VCE = 5V, IC = 500mA*2
IC = 500mA, IB = 50mA*2
IC = 500mA, IB = 50mA*2
VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
90
220
*1
hFE1
hFE2
Forward current transfer ratio
50
100
0.2
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
0.6
1.2
V
V
0.85
120
11
Transition frequency
fT
MHz
pF
Collector output capacitance
Cob
20
*2 Pulse measurement
*1
h
FE1
Rank classification
Rank
hFE1
Q
R
90 ~ 155
WQ
130 ~ 220
WR
2SD0968
Marking
Symbol
Note.) The Part numbers in the Parenthesis show conventional
part number.
2SD0968A
VQ
VR
1