2SD669

更新时间： 2024-11-12 06:16:59

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
5页	281K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

数据手册

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2SD669 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD669 2SD669A

DESCRIPTION

·With TO-126 package

·Complement to type 2SB649/649A

·High breakdown voltage V_CEO:120/160V

·High current 1.5A

·Low saturation voltage,excellent h_FElinearity

APPLICATIONS

·For low-frequency power

amplifier applications

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

180

120

160

UNIT

2SD669

2SD669A

2SD669

2SD669A

V_CBO

Collector-base voltage

Open emitter

V_CEO

Collector-emitter voltage

Open base

V_EBO

I_C

Emitter-base voltage

Collector current (DC)

Collector current-peak

Open collector

1.5

I_CM

T_a=25℃

T_C=25℃

P_D

Total power dissipation

T_j

Junction temperature

Storage temperature

150

-55~150

℃

T_stg

12 3 4 5

中文翻译

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与2SD669相关器件

型号	品牌	获取价格	描述	数据表
2SD669 2SD669A	UTC	获取价格	NPN
2SD669(TO-126)	CJ	获取价格	Transistor
2SD669_10	UTC	获取价格	BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
2SD669_12	UTC	获取价格	BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
2SD669_A	UTC	获取价格	NPN
2SD669A	WINNERJOIN	获取价格	TRANSISTOR (NPN)
2SD669A	MCC	获取价格	NPN Silicon Plastic-Encapsulate Transistor
2SD669A	SAVANTIC	获取价格	Silicon NPN Power Transistors
2SD669A	WEITRON	获取价格	NPN Epitaxial Planar Transistors
2SD669A	ISC	获取价格	Silicon NPN Power Transistors