Datasheet > 2SD669A TO-251

2SD669A TO-251

更新时间： 2024-11-13 17:00:43

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	296K
描述
160V,1.5A,General Purpose PNP Bipolar Transistor

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2SD669A TO-251 数据手册

Product Specification

Silicon NPN Epitaxial Type

2SD669A

FEATURES



Low frequency power amplifier



Complementary to 2SB649A

TO-251

TO-252

Ordering Information

Part Number

Package

Shipping

Marking Code

2SD669A

TO-251

80pcs / Tube

D669A

2SD669A

TO-252

80pcs / Tube or 2500pcs / Tape & Reel

D669A

MAXIMUM RATING operating temperature range applies unless otherwise specified

Symbol

Parameter

Value

Units

Collector-Base Volage

V_CBO

180

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

160

1.5

Collector Current

Collector Power Dissipation

Junction and Storage temperature range

P_C

1.0

℃

T_J,T_STG

-55 to +150

STM0420A

www.gmesemi.com

12 3 4 5

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