Datasheet > 2SD669(TO-126)

2SD669(TO-126)

更新时间： 2024-11-13 06:51:55

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
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1页	243K
描述
Transistor

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2SD669(TO-126) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-126 Plastic-Encapsulate Transistors

2SD669

2SD669A

TO-126

TRANSISTOR (NPN)

FEATURES

Low Frequency Power Amplifier Complementary Pair

1. EMITTER

2. COLLECTOR

3. BASE

with 2SB649/A

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

Parameter

Collector- Base Voltage

Collector-Emitter Voltage

Value

180

120

160

Unit

V_CEO

2SD669

2SD669A

V_EBO

I_C

Emitter-Base Voltage

Collector Current -Continuous

Collector Dissipation

1.5

P_C

℃

T_J

Junction Temperature

Storage Temperature

150

-55-150

T_stg

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V_(BR)CBOI_C=1mA, I_E=0

180

I_C=10mA, I_B=0

V_(BR)CEO

2DS669

120

160

Collector-emitter breakdown voltage

2SD669A

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

V_(BR)EBOI_E=1mA, I_C=0

I_CBO

I_EBO

V_CB=160V, I_E=0

V_EB=4V, I_C=0

µA

_CE=5V, I_C=150mA

2SD669

320

200

h_FE(1)

2SD669A

DC current gain

h_FE(2)

V_CE(sat)

V_BE

V_CE=5V, I_C=500mA

I_C=500mA, I_B=50mA

V_CE=5V, I_C=150mA

V_CB=10V, I_E=0, f=1MHz

Collector-emitter saturation voltage

Base-emitter voltage

1.5

Transition frequency

f_T

140

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE(1)

Rank

160-320

60-120

100-200

Range

2SD669

2SD669A

A,Jun,2011

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