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2SD2396C7/JK PDF预览

2SD2396C7/JK

更新时间: 2024-11-18 18:46:15
品牌 Logo 应用领域
罗姆 - ROHM 局域网晶体管
页数 文件大小 规格书
2页 110K
描述
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FN, 3 PIN

2SD2396C7/JK 技术参数

生命周期:Obsolete零件包装代码:TO-220FN
包装说明:TO-220FN, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.74Is Samacsys:N
外壳连接:ISOLATED最大集电极电流 (IC):3 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):600JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN功耗环境最大值:30 W
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管元件材料:SILICONBase Number Matches:1

2SD2396C7/JK 数据手册

 浏览型号2SD2396C7/JK的Datasheet PDF文件第2页 

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2SD2396C7/K ROHM

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Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti
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2SD2396C7J ROHM

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2SD2396C7K ROHM

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2SD2396H ROHM

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2SD2397C7K ROHM

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2SD2397K ROHM

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Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti