是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-220FN | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.75 |
风险等级: | 5.84 | Is Samacsys: | N |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 2 A |
集电极-发射极最大电压: | 50 V | 配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
最小直流电流增益 (hFE): | 1000 | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 功耗环境最大值: | 20 W |
最大功率耗散 (Abs): | 20 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 80 MHz |
VCEsat-Max: | 1.5 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD2397C7K | ROHM |
获取价格 |
Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti | |
2SD2397K | ROHM |
获取价格 |
Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti | |
2SD2398 | ROHM |
获取价格 |
Power Transistor (100V , 2A) | |
2SD2398C7 | ROHM |
获取价格 |
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
2SD2398C7K | ROHM |
获取价格 |
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
2SD2398K | ROHM |
获取价格 |
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
2SD2399 | ISC |
获取价格 |
isc Silicon NPN Power Transistor | |
2SD2399 | SAVANTIC |
获取价格 |
Silicon NPN Power Transistors | |
2SD2399 | ROHM |
获取价格 |
Transistor,NPN,Darlington | |
2SD2399C7K | ROHM |
获取价格 |
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti |