Datasheet > 2SD2399

2SD2399

更新时间： 2024-11-18 06:19:59

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	206K
描述
Silicon NPN Power Transistors

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中文翻译

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数据手册

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2SD2399 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD2399

DESCRIPTION

·With TO-220F package

·Complement to type 2SB1568

·High DC current gain.

·DARLINGTON

APPLICATIONS

·For low frequency power amplifier

applications

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-220F) and symbol

Absolute maximum ratings (Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

UNIT

Open base

Open collector

I_CM

Collector current-peak

Single pulse

T_C=25ꢀ

P_C

Collector dissipation

T_a=25ꢀ

T_j

Junction temperature

Storage temperature

150

-55~150

ꢀ

T_stg

12 3

中文翻译

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2SD2400/D	ROHM	获取价格	Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla
2SD2400/DF	ROHM	获取价格	Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla
2SD2400/E	ROHM	获取价格	Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla
2SD2400/F	ROHM	获取价格	Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla
2SD2400A	ROHM	获取价格	POWER TRANSISTOR