生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.34 | 最大集电极电流 (IC): | 1.5 A |
配置: | Single | 最小直流电流增益 (hFE): | 60 |
JESD-30 代码: | R-PSIP-T3 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 18 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD2123(L)-(1)B | ETC |
获取价格 |
BJT | |
2SD2123(L)-(1)C | ETC |
获取价格 |
BJT | |
2SD2123(L)B | RENESAS |
获取价格 |
POWER TRANSISTOR, DPAK-3 | |
2SD2123(L)C | RENESAS |
获取价格 |
POWER TRANSISTOR, DPAK-3 | |
2SD2123(S) | RENESAS |
获取价格 |
POWER TRANSISTOR, DPAK-3 | |
2SD2123(S)-(1)B | ETC |
获取价格 |
BJT | |
2SD2123(S)-(1)C | ETC |
获取价格 |
BJT | |
2SD2123(S)B | RENESAS |
获取价格 |
POWER TRANSISTOR, DPAK-3 | |
2SD2123(S)C | RENESAS |
获取价格 |
POWER TRANSISTOR, DPAK-3 | |
2SD2123(S)TL | HITACHI |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy |