生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.34 | Is Samacsys: | N |
最大集电极电流 (IC): | 1.5 A | 配置: | Single |
最小直流电流增益 (hFE): | 60 | JESD-30 代码: | R-PSIP-T3 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 18 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD2123(L)C | RENESAS |
获取价格 |
POWER TRANSISTOR, DPAK-3 | |
2SD2123(S) | RENESAS |
获取价格 |
POWER TRANSISTOR, DPAK-3 | |
2SD2123(S)-(1)B | ETC |
获取价格 |
BJT | |
2SD2123(S)-(1)C | ETC |
获取价格 |
BJT | |
2SD2123(S)B | RENESAS |
获取价格 |
POWER TRANSISTOR, DPAK-3 | |
2SD2123(S)C | RENESAS |
获取价格 |
POWER TRANSISTOR, DPAK-3 | |
2SD2123(S)TL | HITACHI |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy | |
2SD2123(S)TR | RENESAS |
获取价格 |
1.5 A, 160 V, NPN, Si, POWER TRANSISTOR | |
2SD2123L | HITACHI |
获取价格 |
Silicon NPN Epitaxial | |
2SD2123L | RENESAS |
获取价格 |
Silicon NPN Epitaxial |