Datasheet > 2SD2098

2SD2098

更新时间： 2024-11-06 07:31:39

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
页数	文件大小	规格书
3页	798K
描述
Excellent DC current gain characteristics Complements the 2SB1386

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中文翻译

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数据手册

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2SD2098 数据手册

2SD2098

FEATURES

SOT-89

1. ^BASE

Excellent DC current gain characteristics

Complements the 2SB1386

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

2. ^COLLECTOR

3. ^EMITTER

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

P_C

500

150

-55-150

T_J

℃

T_stg

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=50μA,I_E=0

V_(BR)CEOI_C=1mA,I_B=0

V_(BR)EBOI_E=50μA, =0

I_CBO

I_EBO

h_FE

V_CB=40V,I_E=0

0.5

390

μA

Emitter cut-off current

V_EB=5V,I_C=0

DC current gain

V_CE=2V,I_C=0.5A

120

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

I_C=4A,I_B=100mA

V_CE=6V,I_C=50mA,f=100MHz

V_CB=20V,I_E=0,f=1MHz

150

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

Rank

Range

120-270

AHQ

180-390

AHR

Marking

JinYu

semiconductor

www.htsemi.com

12 3

中文翻译

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