Datasheet > 2SD2098R-G

2SD2098R-G

更新时间： 2024-11-30 20:06:07

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描述
Transistor

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技术参数
数据手册

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2SD2098R-G 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SD2098R-G 数据手册

2SD2098

NPN Plastic-Encapsulate Transistor

SOT-89

* “G” Lead(Pb)-Free

1. BASE

2. COLLECTOR

3. EMITTER

(Ta=25 C)

ABSOLUTE MAXIMUM RATINGS

Rating

Unit

Symbol

Value

Vdc

Collector-Emitter Voltage

VCEO

Collector-Base Voltage

Emitter-Base Voltage

VCBO

VEBO

Vdc

6.0

Adc(DC)

5.0

Collector Current

Adc (Pulse)⁽¹⁾

0.5

Collector Power Dissipation

Junction Temperature, Storage Temperature

, Tstg

-55 to +150

150,

Device Marking

2SD2098Q=AHQ, 2SD2098R=AHR

ELECTRICAL CHARACTERISTICS

Characteristics

Symbol

Min

Max

Unit

Collector-Emitter Breakdown Voltage (I = 1.0 mAdc, I =0)

Vdc

(BR)CEO

Vdc

Collector-Base Breakdown Voltage (I = 50 µAdc, I =0)

(BR)CBO

6.0

Emitter-Base Breakdown Voltage (I = 50 µAdc, I =0)

(BR)EBO

Collector Cutoff Current (V = 40 Vdc, I =0)

uAdc

CBO

0.5

Emitter Cutoff Current (V =5.0 Vdc, I =0)

EBO

Note:

1. Single pulse pw=10ms

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