Datasheet > 2SD2098

2SD2098

更新时间： 2024-11-06 06:25:55

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描述
NPN Silicon Epitaxial Planar Tra nsistor

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2SD2098 数据手册

2SD2098

NPN Silicon

Elektronische Bauelemente

Epitaxial PlanarTransistor

RoHS Compliant Product

SOT-89

Description

The 2SD2098 is an epitaxial planar

type NPN silicon transistor.

Features

* Excellent DC Current Gain Characteristics

* Low Saturation Voltage, Typically VCE(SAT)=0.25V

At IC/IB=4A/0.1A

Millimeter

Min. Max.

3.00 REF.

REF.

Min.

4.4

Max.

4.6

4.05

1.50

1.30

2.40

0.89

4.25

1.70

1.50

2.60

1.20

1.50 REF.

0.40

1.40

0.35

0.52

1.60

0.41

5q TYP.

0.70 REF.

Absolute Maximum Ratings at TA=25^oC

Symbol

Parameter

Value

Units

V_CBO

Collector-Base Voltage

V^CEO

V^EBO

Collector-Emitter Voltage

Emitter-Base Voltage

ICP

Collector Current (DC)

Collector Current (Pulse)*¹

0.5 (2.0*²)

Total Power Dissipation

Storage Temperature

Junction and

TJ,

-55~+150

Tstg

*1: Single pulse, PW=10ms

*2: When mounted on a 40*40*0.7mm ceramic board

ELECTRICAL CHARACTERISTICS Tamb=25

unless otherwise specified

Typ.

Uni

Parameter

Symbol

Min

Max

Test Conditions

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current

IC=50µA,IE=0

IC=1mA,IB=0

BVCBO

BVCEO

BVEBO

ICBO

IE=

50µA,IC=0

VCB=40V,IE=0

0.5

Emitter-Base Cutoff Current

IEBO

VEB=

5V,IC=0

IC=4A,IB=0.1A

Collector Saturation Voltage

DC Current Gain

*VCE(sat)

*hFE

0.25

120

390

VCE= V, IC=0.5A

Gain-Bandwidth Product

Output Capacitance

VCE= 6V, IC=50mA,f=100MH

150

Cob

VCB=20V, f=1MHz,IE=0

≦

Measured under pulse condition.Pulse width 300 s, Duty Cycle 2%

Classification of hFE

Rank

120~270

Range

180~390

http://www.SeCoSGmbH.com

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 3

12 3

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