Datasheet > 2SD1857_09

2SD1857_09

更新时间： 2024-11-05 06:16:15

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
3页	159K
描述
Power Transistor (120V, 2A)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SD1857_09 数据手册

Power Transistor (120V, 2A)

2SD1857

Features

Dimensions (Unit : mm)

1) High breakdown voltage. (BV^CEO= 120V)

2) Low collector output capacitance.

(Typ. 20pF at V^CB= 10V)

2SD1857

2.5

6.8

3) High transition frequency. (f^T= 80MHz)

4) Complements the 2SB1236.

0.65Max.

0.5

( )

( ) ( )

2 3

2.54 2.54

1.05

0.45

(1) Emitter

(2) Collector

(3) Base

Taping specifications

ROHM : ATV

Packaging specifications and h^FE

Package

Taping

TV2

Type

Code

hFE

Basic ordering unit (pieces)

2500

2SD1857

hFE values are classified as follows:

Item

hFE

120 to 270 180 to 390

Absolute maximum ratings (Ta = 25C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

Unit

VCBO

VCEO

VEBO

120

Collector current

∗1

Collector power dissipation

Junction temperature

Storage temperature

∗2

150

°C

Tstg

−55 to +150

∗

1 Single pulse Pw = 10ms

2 When mounted on 1.7mm thick PCB having collector foll dimensions 1cm

∗

or more.

Electrical characteristics (Ta = 25C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

BV^CBO

BVCEO

BVEBO

120

−

= 50μA

= 1mA

= 50μA

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

CBO

EBO

CE(sat)

−

120

−

μA

CB = 100V

EB = 4V

Emitter cutoff current

−

= 1A/0.1A

= 5V/0.1A

CE = 5V , I = −0.1A , f = 30MHz

CB = 10V , I = 0A , f = 1MHz

Collector-emitter saturation voltage

DC current transfer ratio

∗

390

−

MHz

CE/IC

Transition frequency

Output capacitance

Cob

−

Measured using pulse current.

∗

www.rohm.com

2009.12 - Rev.E

1/2

12 3

中文翻译

下载PDF

与2SD1857_09相关器件

型号	品牌	获取价格	描述	数据表
2SD1857_12	UTC	获取价格	POWER TRANSISTOR
2SD1857A	ROHM	获取价格	Power Transistor (160V , 1.5A)
2SD1857AN	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 3A I(C) \| SIP
2SD1857AP	ROHM	获取价格	TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 3A I(C) \| SIP
2SD1857AQ	ROHM	获取价格	TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 3A I(C) \| SIP
2SD1857ATV2/N	ROHM	获取价格	1500mA, 160V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD1857ATV2/NP	ROHM	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon,
2SD1857ATV2/NQ	ROHM	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon,
2SD1857ATV2/PQ	ROHM	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon,
2SD1857ATV2Q	ROHM	获取价格	Small Signal Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, ATV, 3