2SD1742TX

更新时间： 2024-10-14 12:58:39

品牌	Logo	应用领域
松下 - PANASONIC		晶体晶体管功率双极晶体管光电二极管放大器
页数	文件大小	规格书
2页	52K
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中文翻译

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数据手册

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2SD1742TX 数据手册

Power Transistors

2SD1742, 2SD1742A

Silicon NPN triple diffusion planar type

For low-freauency power amplification

Unit: mm

7.0±0.3

3.0±0.2

3.5±0.2

Complementary to 2SB1172 and 2SB1172A

Features

■

●

High forward current transfer ratio h_FEwhich has satisfactory linearity

1.1±0.1

0.85±0.1

0.4±0.1

0.75±0.1

●

Low collector to emitter saturation voltage V_CE(sat)

●

I type package enabling direct soldering of the radiating fin to

the printed circuit board, etc. of small electronic equipment.

2.3±0.2

4.6±0.4

Absolute Maximum Ratings (T =25˚C)

■

1:Base

2:Collector

3:Emitter

I Type Package

Parameter

Symbol

Ratings

Unit

Collector to

2SD1742

2SD1742A

2SD1742

V_CBO

base voltage

Collector to

Unit: mm

7.0±0.3

3.5±0.2

2.0±0.2

3.0±0.2

0 to 0.15

V_CEO

emitter voltage 2SD1742A

Emitter to base voltage

Peak collector current

Collector current

V_EBO

I_CP

2.5

I_C

0.75±0.1

0.5 max.

0.9±0.1

Collector power T_C=25°C

1.1±0.1

0 to 0.15

P_C

dissipation

Ta=25°C

1.3

Junction temperature

Storage temperature

T_j

150

˚C

1:Base

2:Collector

3:Emitter

T_stg

–55 to +150

2.3±0.2

4.6±0.4

I Type Package (Y)

Electrical Characteristics (T =25˚C)

■

Parameter

Collector cutoff

Symbol

I_CES

Conditions

min

typ

max

200

300

Unit

2SD1742

2SD1742A

2SD1742

2SD1742A

V_CE= 60V, V_BE= 0

µA

current

V_CE= 80V, V_BE= 0

V_CE= 30V, I_B= 0

V_CE= 60V, I_B= 0

V_EB= 6V, I_C= 0

Collector cutoff

current

I_CEO

I_EBO

V_CEO

µA

Emitter cutoff current

Collector to emitter 2SD1742

voltage 2SD1742A

I_C= 30mA, I_B= 0

h_FE1

V_CE= 4V, I_C= 1A

250

Forward current transfer ratio

Base to emitter voltage

h_FE2

V_BE

V_CE= 4V, I_C= 3A

1.8

1.2

Collector to emitter saturation voltage V_CE(sat)

I_C= 3A, I_B= 0.375A

V_CE= 10V, I_C= 0.5A, f = 10MHz

Transition frequency

Turn-on time

Storage time

Fall time

f_T

t_on

t_stg

t_f

0.5

2.5

0.4

MHz

µs

I_C= 1A, I_B1= 0.1A, I_B2= – 0.1A,

V_CC= 50V

µs

^*h_FE1Rank classification

Rank

h_FE1

70 to 150

120 to 250

中文翻译

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与2SD1742TX相关器件

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2SD1743	PANASONIC	获取价格	Silicon NPN triple diffusion planar type
2SD1743/2SD1743A	ETC	获取价格	2SD1743. 2SD1743A - NPN Transistor
2SD1743A	PANASONIC	获取价格	Silicon NPN triple diffusion planar type
2SD1743AH	PANASONIC	获取价格	暂无描述
2SD1743AP	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 4A I(C) \| TO-221VAR
2SD1743AQ	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 4A I(C) \| TO-221VAR
2SD1743AR	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 4A I(C) \| TO-221VAR
2SD1743ATX	PANASONIC	获取价格	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
2SD1743H	PANASONIC	获取价格	暂无描述
2SD1743P	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 4A I(C) \| TO-221VAR