2SD1746

更新时间： 2024-10-13 22:52:47

品牌	Logo	应用领域
松下 - PANASONIC		开关
页数	文件大小	规格书
3页	60K
描述
Silicon NPN epitaxial planar type(For power switching)

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中文翻译

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数据手册

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2SD1746 数据手册

Power Transistors

2SD1746

Silicon NPN epitaxial planar type

Unit: mm

For power switching

7.0±0.3

3.0±0.2

3.5±0.2

Complementary to 2SB1176

Features

■

1.1±0.1

0.85±0.1

0.4±0.1

0.75±0.1

●

Low collector to emitter saturation voltage V_CE(sat)

●

Satisfactory linearity of foward current transfer ratio h_FE

●

Large collector current I_C

2.3±0.2

●

I type package enabling direct soldering of the radiating fin to

4.6±0.4

the printed circuit board, etc. of small electronic equipment.

1:Base

2:Collector

3:Emitter

I Type Package

Absolute Maximum Ratings (T =25˚C)

■

Unit: mm

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CP

Ratings

Unit

7.0±0.3

3.5±0.2

2.0±0.2

3.0±0.2

0 to 0.15

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

130

2.5

I_C

0.75±0.1

0.5 max.

0.9±0.1

Collector power T_C=25°C

1.1±0.1

0 to 0.15

P_C

dissipation

Ta=25°C

1.3

Junction temperature

Storage temperature

T_j

150

˚C

1:Base

2:Collector

3:Emitter

2.3±0.2

T_stg

–55 to +150

4.6±0.4

I Type Package (Y)

Electrical Characteristics (T =25˚C)

■

Parameter

Symbol

I_CBO

Conditions

min

typ

max

Unit

µA

Collector cutoff current

Emitter cutoff current

V_CB= 100V, I_E= 0

I_EBO

V_CEO

h_FE1

V_EB= 5V, I_C= 0

I_C= 10mA, I_B= 0

Collector to emitter voltage

_CE= 2V, I_C= 0.1A

Forward current transfer ratio

h_FE2

V_CE= 2V, I_C= 2A

260

0.5

1.5

Collector to emitter saturation voltage V_CE(sat)

Base to emitter saturation voltage V_BE(sat)

I_C= 2A, I_B= 0.2A

Transition frequency

Turn-on time

Storage time

Fall time

f_T

t_on

t_stg

t_f

V_CE= 10V, I_C= 0.5A, f = 10MHz

0.5

MHz

µs

I_C= 2A, I_B1= 0.2A, I_B2= – 0.2A,

V_CC= 50V

1.5

µs

0.15

µs

^*h_FE2Rank classification

Rank

h_FE2

90 to 180

130 to 260

12 3

中文翻译

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