Datasheet > 2SD1745-Q

2SD1745-Q

更新时间： 2024-10-15 01:14:15

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1219K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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2SD1745-Q 数据手册

SMD Type

Transistors

NPN Transistors

2SD1745

TO-252

Unit: mm

+0.15

-0.15

6.50

+0.1

-0.1

2.30

+0.8

-0.7

■ Features

+0.2

5.30

-0.2

0.50

● Satisfactory linearity of foward current transfer ratio hFE

● Low collector to emitter saturation voltage VCE(sat)

● Large collector current I

0.127

max

+0.1

-0.1

0.80

● Complementary to 2SB1175

0.1

0.60⁺_-

1 Base

2.3

4.60

+0.15

-0.15

2 Collector

3 Emitter

■ Absolute Maximum Rating s Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

130

Unit

VCBO

VCEO

VEBO

Collector Current - Continuous

Collector Current - Pulse

Collector Power Dissipation

Tc=25°C

Ta=25°C

℃

1.3

150

Junction Temperature

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

130

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 100 uA， I

Ic= 10 mA，I = 0

= 100 uA， I = 0

CB= 100 V , I = 0

^EB= 6V , I =0

E= 0

CBO

EBO

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=3 A, I

=150 mA

0.5

1.5

=3 A, I

CE= 2V, I

^CE= 2V, I

= 100 mA

= 1 A

DC current gain

hFE

260

Turn-ON Time

Storage Time

Fall Time

0.5

2.5

0.15

= 1A, IB1 = 0.1A, IB2 = – 0.1A,

stg

CC = 50V

Transition frequency

CE= 10V, I

C= 500mA,f=10MHz

MHz

■ Classification of hfe(2)

Type

2SD1745-Q

90-180

2SD1745-P

130-260

Range

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中文翻译

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