生命周期: | Transferred | 零件包装代码: | SIP |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.33 |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 1.5 A |
集电极-发射极最大电压: | 100 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 200 | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 10 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 120 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD1684T | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1.5A I(C) | TO-126 | |
2SD1685 | SANYO |
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High-Current Switching Applications | |
2SD1685E | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-126 | |
2SD1685F | ETC |
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TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-126 | |
2SD1685G | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-126 | |
2SD1691 | UTC |
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LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT | |
2SD1691 | NEC |
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NPN SILICON POWER TRANSISTOR | |
2SD1691 | ISC |
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Silicon NPN Power Transistors | |
2SD1691 | TGS |
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It is intented for use in power amplifier and switching applications. | |
2SD1691 | SAVANTIC |
获取价格 |
Silicon NPN Power Transistors |