是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | SIP | 包装说明: | TO-126C, 3 PIN |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.09 |
最大集电极电流 (IC): | 5 A | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 160 |
JEDEC-95代码: | TO-126 | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SD1691G-O-TF1-T | UTC |
获取价格 |
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti | |
2SD1691G-X-T60-K | UTC |
获取价格 |
LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT | |
2SD1691G-X-T6C-K | UTC |
获取价格 |
LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT | |
2SD1691G-X-TA3-T | UTC |
获取价格 |
LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT | |
2SD1691G-X-TF1-T | UTC |
获取价格 |
LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT | |
2SD1691G-Y-T60-K | UTC |
获取价格 |
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/ | |
2SD1691G-Y-TF1-T | UTC |
获取价格 |
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plasti | |
2SD1691K | NEC |
获取价格 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-126 | |
2SD1691-K | NEC |
获取价格 |
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/ | |
2SD1691K-S1-AZ | RENESAS |
获取价格 |
TRANSISTOR,BJT,NPN,60V V(BR)CEO,5A I(C),TO-126 |