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2SD1691-L

更新时间： 2024-11-19 21:10:19
品牌 Logo 应用领域
日电电子 - NEC 局域网开关晶体管
页数 文件大小 规格书
4页 114K
描述
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN

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2SD1691-L 技术参数

生命周期：Obsolete包装说明：TO-126, 3 PIN
Reach Compliance Code：unknown风险等级：5.6
外壳连接：COLLECTOR最大集电极电流 (IC)：5 A
集电极-发射极最大电压：60 V配置：SINGLE
最小直流电流增益 (hFE)：160JEDEC-95代码：TO-126
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

2SD1691-L 数据手册

 浏览型号2SD1691-L的Datasheet PDF文件第2页浏览型号2SD1691-L的Datasheet PDF文件第3页浏览型号2SD1691-L的Datasheet PDF文件第4页 
DATA SHEET  
SILICON POWER TRANSISTOR  
2SD1691  
NPN SILICON EPITAXIAL TRANSISTOR  
FOR LOW-FREQUENCEY POWER AMPLIFIERS AND MID-SPEED SWITCHING  
FEATURES  
PACKAGE DRAWING (UNIT: mm)  
• Large current capacity and low VCE(sat):  
IC(DC) = 5.0 A, IC(pulse) = 8.0 A  
VCE(sat) = 0.1 V TYP. (@IC = 2.0 A, IB = 0.2 A)  
• Large power dissipation TO-126 type power transistor  
PT = 1.3 W (@Ta = 25°C), 20 W (@Tc = 25°C)  
• Complementary transistor: 2SB1151  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
Parameter  
Symbol  
VCBO  
Ratings  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Collector current (pulse)  
Base current (DC)  
60  
VCEO  
60  
7.0  
V
VEBO  
V
IC(DC)  
5.0  
A
IC(pulse)*  
IB(DC)  
8.0  
A
Electrode Connection  
1.0  
A
Total power dissipation  
Total power dissipation  
Junction temperature  
Storage temperature  
PT (Ta = 25°C)  
PT (Tc = 25°C)  
Tj  
1.3  
W
W
°C  
°C  
20  
150  
Tstg  
−55 to +150  
* PW ≤ 10 ms, duty cycle ≤ 50%  
ELECTRICAL CHARACTERISTICS (Ta = 25°C)  
Parameter  
Collector cutoff current  
Emitter cutoff current  
DC current gain  
Symbol  
ICBO  
Conditions  
VCB = 50 V, IE = 0  
MIN.  
TYP.  
MAX.  
10  
Unit  
µA  
IEBO  
VEB = 7.0 V, IC = 0  
10  
µA  
hFE1**  
hFE2**  
hFE3**  
VCE(sat)**  
VBE(sat)**  
ton  
VCE = 1.0 V, IC = 0.1 A  
VCE = 1.0 V, IC = 2.0 A  
VCE = 1.0 V, IC = 5.0 A  
IC = 2.0 A, IB = 0.2 A  
IC = 2.0 A, IB = 0.2 A  
60  
100  
50  
DC current gain  
400  
DC current gain  
Collector saturation voltage  
Base saturation voltage  
Turn-on time  
0.1  
0.9  
0.2  
1.1  
0.2  
0.3  
1.2  
1.0  
2.5  
1.0  
V
V
IC = 2.0 A, IB1 = −IB2 = 0.2 A  
RL = 5.0 Ω, VCC ≅ 10 V  
µs  
µs  
µs  
Storage time  
tstg  
Fall time  
tf  
** Pulse test PW ≤ 350 µs, duty cycle ≤ 2%  
hFE CLASSIFICATION  
Marking  
M
L
K
hFE2  
100 to 200  
160 to 320  
200 to 400  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D16190EJ1V1DS00 (1st edition)  
Date Published December 2004 NS CP(K)  
Printed in Japan  
2002  
1234

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