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2SD1683S PDF预览

2SD1683S

更新时间: 2024-11-19 12:54:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关PC局域网
页数 文件大小 规格书
7页 320K
描述
Bipolar Transistor

2SD1683S 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete包装说明:TO-126ML, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.2
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:224373Samacsys Pin Count:3
Samacsys Part Category:TransistorSamacsys Package Category:Transistor Outline, Vertical
Samacsys Footprint Name:TO-126MLSamacsys Released Date:2015-11-03 12:30:39
Is Samacsys:N最大集电极电流 (IC):4 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):140JEDEC-95代码:TO-126
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN表面贴装:NO
端子面层:Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

2SD1683S 数据手册

 浏览型号2SD1683S的Datasheet PDF文件第2页浏览型号2SD1683S的Datasheet PDF文件第3页浏览型号2SD1683S的Datasheet PDF文件第4页浏览型号2SD1683S的Datasheet PDF文件第5页浏览型号2SD1683S的Datasheet PDF文件第6页浏览型号2SD1683S的Datasheet PDF文件第7页 
Ordering number : EN2063C  
2SB1143/2SD1683  
Bipolar Transistor  
http://onsemi.com  
(–)  
(–)  
(
) (  
)
50V,  
4A, Low V  
CE  
sat , PNP NPN Single TO-126ML  
Applications  
Voltage regulators, relay drivers, lamp drivers, electrical equipment  
Features  
Adoption of FBET, MBIT processes  
Large current capacity and wide ASO  
Low saturation voltage  
( ): 2SB1143  
Specications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
(--)60  
(--)50  
(--)6  
(--)4  
(--)6  
1.5  
CBO  
V
V
CEO  
V
V
EBO  
I
C
A
Collector Current (Pulse)  
I
A
CP  
W
W
Collector Dissipation  
P
C
Tc=25  
C
10  
°
Junction Temperature  
Storage Temperature  
Tj  
150  
C
C
°
°
Tstg  
--55 to +150  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating  
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.  
Package Dimensions  
unit : mm (typ)  
Product & Package Information  
• Package  
: TO-126ML  
7516A-002  
• JEITA, JEDEC  
: TO-126  
• Minimum Packing Quantity : 200 pcs./bag  
8.0  
4.0  
2SB1143S  
2SB1143T  
2SD1683S  
2SD1683T  
Marking  
3.6  
3.3  
1.0  
1.0  
B1143  
D1683  
RANK LOT No.  
RANK LOT No.  
1.6  
0.8  
0.8  
0.75  
0.7  
Electrical Connection  
1
2
3
2
2
1
1 : Emitter  
2 : Collector  
3 : Base  
3
3
2.4  
4.8  
TO-126ML  
1
2SB1143  
2SD1683  
Semiconductor Components Industries, LLC, 2013  
September, 2013  
90512 TKIM/O2003TN (KOTO)/92098HA (KT)/4137KI/D176TA, TS No.2063-1/7  

2SD1683S 替代型号

型号 品牌 替代类型 描述 数据表
2SD1683T ONSEMI

类似代替

Bipolar Transistor
BDW83-S BOURNS

功能相似

Power Bipolar Transistor, 15A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
TR136 STMICROELECTRONICS

功能相似

High voltage fast-switching NPN power transistor

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TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1.5A I(C) | TO-126
2SD1684S ETC

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TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1.5A I(C) | TO-126
2SD1684T ETC

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TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1.5A I(C) | TO-126
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High-Current Switching Applications
2SD1685E ETC

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TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-126
2SD1685F ETC

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TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-126