Datasheet > 2SD1621U

2SD1621U

更新时间： 2024-11-15 23:20:27

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	111K
描述
TRANSISTOR \| BJT \| NPN \| 25V V(BR)CEO \| 2A I(C) \| SOT-89

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2SD1621U 数据手册

Ordering number:1787A

PNP/NPN Epitaxial Planar Silicon Transistors

2SB1121/2SD1621

High-Current Driver Applications

Applications

Package Dimensions

unit:mm

· Voltage regulators, relay drivers, lamp drivers,

electrical equipment.

2038

[2SB1121/2SD1621]

Features

· Adoption of FBET, MBIT processes.

· Low collector-to-emitter saturation voltage.

· Large current capacity and wide ASO.

· Fast switching speed.

· Very small size making it easy to provide high-

density, small-sized hybrid IC’s.

E : Emitter

C : Collector

B : Base

( ) : 2SB1121

SANYO : PCP

(Bottom view)

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Collector-to-Base Voltage

Symbol

Conditions

Ratings

Unit

(–)30

(–)25

(–)6

(–)2

(–)5

500

1.3

CBO

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

CEO

EBO

Collector Current (Pulse)

Collector Dissipation

˚C

Mounted on ceramic board (250mm²×0.8mm)

Junction Temperature

Storage Temperature

150

Tstg

–55 to +150

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

Collector Cutoff Current

=(–)20V, I =0

=(–)4V, I =0

=(–)2V, I =(–)100mA

=(–)2V, I =(–)1.5A

(–)0.1

560*

µA

CBO

Emitter Cutoff Current

DC Current Gain

EBO

100*

Gain-Bandwidth Product

=(–)10V, I =(–)50mA

150

MHz

* ; The 2SB1121/2SD1621 are classified by 100mA h as follows :

100

200

140

280

200

400

280

560

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

92098HA (KT)/4107KI/3045MW, TS No.1787–1/4

12 3 4

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2SD1622S	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 1A I(C) \| SOT-89
2SD1622-S	KEXIN	获取价格	NPN Transistors
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