Datasheet > 2SD1621-U

2SD1621-U

更新时间： 2024-11-17 01:05:19

品牌	Logo	应用领域
科信 - KEXIN		开关晶体管
页数	文件大小	规格书
3页	1024K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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2SD1621-U 数据手册

SMD Type

Transistors

NPN Transistors

2SD1621

1.70 0.1

■ Features

● Low collector-to-emitter saturation voltage.

● Large current capacity and wide ASO.

● Fast switching speed.

0.42 0.1

0.46 0.1

● Complementary transistor with the 2SB1121

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

VCBO

VCEO

VEBO

Collector Current - Continuous

Collector current -pulse

℃

Collector Power Dissipation

Junction Temperature

500

150

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Ic= 100 μA， I = 0

Ic= 1 mA， RBE= ∞

= 100μA， I = 0

CB= 20V , I = 0

EB= 4V , I =0

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

CBO

EBO

0.1

0.4

1.2

560

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=1.5A, I

=75mA

0.18

0.85

C=1.5A, I

CE= 2V, I

= 100mA

100

DC current gain

hFE

C= 1.5A

Turn-on time

stg

off

500

See specified Test Circuit.

Storage time

Turn-off time

Collector output capacitance

Transition frequency

^CB= 10V, I

^CE= 10V, I

= 0,f=1MHz

= 50mA

150

MHz

■ Classification of hfe(1)

Type

2SD1621-R

2SD1621-S

2SD1621-T

2SD1621-U

Range

100-200

DDR

140-280

DDS

200-400

DDT

280-560

DDU

Marking

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中文翻译

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